A simple new method for the investigation of process latitude in E-beam lithography with positive resists.

V A Kudryashov; P D Prewett; A G Michette

A simple new method for the investigation of process latitude in E-beam lithography with positive resists.

V A Kudryashov, P D Prewett, A G Michette

Physics

Research output: Contribution to journal › Conference paper

1 Citation (Scopus)

Abstract

SEM linewidth measurement in the process latitude investigation procedure can be replaced with a resist reflow technique for PMMA and other positive resists. The linewidth dependence on technical parameters can be measured quickly and cheaply with specialised test structures.

Original language	English
Pages (from-to)	333 - 336
Number of pages	4
Journal	MICROELECTRONIC ENGINEERING
Volume	53
Issue number	1-4
Publication status	Published - 2000
Event	25th International Conference on Micro- and Nano-Engineering - ROME, Italy Duration: 1 Jan 2000 → …

Cite this

@article{8736d082b95442fe8af65d124dc166df,

title = "A simple new method for the investigation of process latitude in E-beam lithography with positive resists.",

abstract = "SEM linewidth measurement in the process latitude investigation procedure can be replaced with a resist reflow technique for PMMA and other positive resists. The linewidth dependence on technical parameters can be measured quickly and cheaply with specialised test structures.",

author = "Kudryashov, {V A} and Prewett, {P D} and Michette, {A G}",

year = "2000",

language = "English",

volume = "53",

pages = "333 -- 336",

journal = "MICROELECTRONIC ENGINEERING",

publisher = "Elsevier",

number = "1-4",

note = "25th International Conference on Micro- and Nano-Engineering ; Conference date: 01-01-2000",

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TY - JOUR

T1 - A simple new method for the investigation of process latitude in E-beam lithography with positive resists.

AU - Kudryashov, V A

AU - Prewett, P D

AU - Michette, A G

PY - 2000

Y1 - 2000

N2 - SEM linewidth measurement in the process latitude investigation procedure can be replaced with a resist reflow technique for PMMA and other positive resists. The linewidth dependence on technical parameters can be measured quickly and cheaply with specialised test structures.

AB - SEM linewidth measurement in the process latitude investigation procedure can be replaced with a resist reflow technique for PMMA and other positive resists. The linewidth dependence on technical parameters can be measured quickly and cheaply with specialised test structures.

M3 - Conference paper

VL - 53

SP - 333

EP - 336

JO - MICROELECTRONIC ENGINEERING

JF - MICROELECTRONIC ENGINEERING

IS - 1-4

T2 - 25th International Conference on Micro- and Nano-Engineering

Y2 - 1 January 2000

ER -

A simple new method for the investigation of process latitude in E-beam lithography with positive resists.

Abstract

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