Aging Benefits in Nanometer CMOS Designs

Daniele Rossi, Vasileios Tenentes, Sheng Yang, Saqib Khursheed, Bashir M. Al-Hashimi

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

In this brief, we show that bias temperature instability (BTI) aging of MOS transistors, together with its detrimental effect for circuit performance and lifetime, presents considerable benefits for static power consumption due to subthreshold leakage current reduction. Indeed, static power reduces considerably, making CMOS circuits more energy efficient over time. Static power reduction depends on transistor stress ratio and operating temperature. We propose a simulation flow allowing us to properly evaluate the BTI aging of complex circuits in order to estimate BTI-induced power reduction accurately. Through HSPICE simulations, we show 50% static power reduction after only one month of operation, which exceeds 78% in ten years. BTI aging benefits for power consumption are also proven with experimental measurements.

Original languageEnglish
Article number7463508
Pages (from-to)324-328
Number of pages5
JournalIEEE Transactions on Circuits and Systems II: Express Briefs
Volume64
Issue number3
Early online date3 Mar 2016
DOIs
Publication statusPublished - 2 May 2016

Keywords

  • Bias temperature instability (BTI) aging
  • energy efficiency
  • leakage current
  • nanometer technology
  • static power

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