An ab initio study of C-60 adsorption on the Si(001) surface

Chris Hobbs; Lev Nohimovich Kantorovitch; Julian D. Gale

doi:10.1016/j.susc.2005.06.038

An ab initio study of C-60 adsorption on the Si(001) surface

Chris Hobbs, Lev Nohimovich Kantorovitch, Julian D. Gale

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Abstract

Continuing our previous preliminary ab initio DFT study of the adsorption of a C60 molecule on the clean Si(0 0 1) surface [C. Hobbs, L. Kantorovich, Nanotechnology 15 (2004) S1] we present possible configurations that the molecule can adsorb in, on the surface. The binding energies for individual sites (over 20) are calculated within the GGA and LDA approximations, taking into account a BSSE correction due to the localised basis set used. Additional adsorption sites to those found previously are identified and analysed in detail and a hierarchy of the most stable sites is constructed. Upon the adsorption, the molecule forms strong covalent bonds with the surface dimers, whereupon the structure of nearby single and double C–C bonds of the C60 cage undergo substantial reformation. We confirm our previous result that the adsorption energies are greatly reduced within the GGA.

Original language	English
Pages (from-to)	45-55
Number of pages	11
Journal	SURFACE SCIENCE
Volume	591
Issue number	1-3
DOIs	https://doi.org/10.1016/j.susc.2005.06.038
Publication status	Published - 20 Oct 2005

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10.1016/j.susc.2005.06.038

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@article{27be5f7f9efa4577aa0f02d32b5e438c,

title = "An ab initio study of C-60 adsorption on the Si(001) surface",

abstract = "Continuing our previous preliminary ab initio DFT study of the adsorption of a C60 molecule on the clean Si(0 0 1) surface [C. Hobbs, L. Kantorovich, Nanotechnology 15 (2004) S1] we present possible configurations that the molecule can adsorb in, on the surface. The binding energies for individual sites (over 20) are calculated within the GGA and LDA approximations, taking into account a BSSE correction due to the localised basis set used. Additional adsorption sites to those found previously are identified and analysed in detail and a hierarchy of the most stable sites is constructed. Upon the adsorption, the molecule forms strong covalent bonds with the surface dimers, whereupon the structure of nearby single and double C–C bonds of the C60 cage undergo substantial reformation. We confirm our previous result that the adsorption energies are greatly reduced within the GGA.",

author = "Chris Hobbs and Kantorovitch, {Lev Nohimovich} and Gale, {Julian D.}",

year = "2005",

month = oct,

day = "20",

doi = "10.1016/j.susc.2005.06.038",

language = "English",

volume = "591",

pages = "45--55",

journal = "SURFACE SCIENCE",

publisher = "Elsevier",

number = "1-3",

}

TY - JOUR

T1 - An ab initio study of C-60 adsorption on the Si(001) surface

AU - Hobbs, Chris

AU - Kantorovitch, Lev Nohimovich

AU - Gale, Julian D.

PY - 2005/10/20

Y1 - 2005/10/20

N2 - Continuing our previous preliminary ab initio DFT study of the adsorption of a C60 molecule on the clean Si(0 0 1) surface [C. Hobbs, L. Kantorovich, Nanotechnology 15 (2004) S1] we present possible configurations that the molecule can adsorb in, on the surface. The binding energies for individual sites (over 20) are calculated within the GGA and LDA approximations, taking into account a BSSE correction due to the localised basis set used. Additional adsorption sites to those found previously are identified and analysed in detail and a hierarchy of the most stable sites is constructed. Upon the adsorption, the molecule forms strong covalent bonds with the surface dimers, whereupon the structure of nearby single and double C–C bonds of the C60 cage undergo substantial reformation. We confirm our previous result that the adsorption energies are greatly reduced within the GGA.

AB - Continuing our previous preliminary ab initio DFT study of the adsorption of a C60 molecule on the clean Si(0 0 1) surface [C. Hobbs, L. Kantorovich, Nanotechnology 15 (2004) S1] we present possible configurations that the molecule can adsorb in, on the surface. The binding energies for individual sites (over 20) are calculated within the GGA and LDA approximations, taking into account a BSSE correction due to the localised basis set used. Additional adsorption sites to those found previously are identified and analysed in detail and a hierarchy of the most stable sites is constructed. Upon the adsorption, the molecule forms strong covalent bonds with the surface dimers, whereupon the structure of nearby single and double C–C bonds of the C60 cage undergo substantial reformation. We confirm our previous result that the adsorption energies are greatly reduced within the GGA.

U2 - 10.1016/j.susc.2005.06.038

DO - 10.1016/j.susc.2005.06.038

M3 - Article

VL - 591

SP - 45

EP - 55

JO - SURFACE SCIENCE

JF - SURFACE SCIENCE

IS - 1-3

ER -

An ab initio study of C-60 adsorption on the Si(001) surface

Abstract

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