Effect of disorder on Raman scattering of single-layer Mo S2

Sandro Mignuzzi; Andrew J. Pollard; Nicola Bonini; Barry Brennan; Ian S. Gilmore; Marcos A. Pimenta; David Richards; Debdulal Roy

doi:10.1103/PhysRevB.91.195411

Effect of disorder on Raman scattering of single-layer Mo S₂

Sandro Mignuzzi, Andrew J. Pollard, Nicola Bonini, Barry Brennan, Ian S. Gilmore, Marcos A. Pimenta, David Richards, Debdulal Roy

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Abstract

We determine the effect of defects induced by ion bombardment on the Raman spectrum of single-layer molybdenum disulfide. The evolution of both the linewidths and frequency shifts of the first-order Raman bands with the density of defects is explained with a phonon confinement model, using density functional theory to calculate the phonon dispersion curves. We identify several defect-induced Raman scattering peaks arising from zone-edge phonon modes. Among these, the most prominent is the LA(M) peak at ∼227cm^-1 and its intensity, relative to the one of first-order Raman bands, is found to be proportional to the density of defects. These results provide a practical route to quantify defects in single-layer Mo S₂ using Raman spectroscopy and highlight an analogy between the LA(M) peak in Mo S₂ and the D peak in graphene.

Original language	English
Article number	195411
Number of pages	7
Journal	Physical Review B (Condensed Matter and Materials Physics)
Volume	91
Issue number	19
Early online date	11 May 2015
DOIs	https://doi.org/10.1103/PhysRevB.91.195411
Publication status	Published - 15 May 2015

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@article{bc04a1c24cdb4decb4222f845d75cf0d,

title = "Effect of disorder on Raman scattering of single-layer Mo S2",

abstract = "We determine the effect of defects induced by ion bombardment on the Raman spectrum of single-layer molybdenum disulfide. The evolution of both the linewidths and frequency shifts of the first-order Raman bands with the density of defects is explained with a phonon confinement model, using density functional theory to calculate the phonon dispersion curves. We identify several defect-induced Raman scattering peaks arising from zone-edge phonon modes. Among these, the most prominent is the LA(M) peak at ∼227cm-1 and its intensity, relative to the one of first-order Raman bands, is found to be proportional to the density of defects. These results provide a practical route to quantify defects in single-layer Mo S2 using Raman spectroscopy and highlight an analogy between the LA(M) peak in Mo S2 and the D peak in graphene.",

author = "Sandro Mignuzzi and Pollard, {Andrew J.} and Nicola Bonini and Barry Brennan and Gilmore, {Ian S.} and Pimenta, {Marcos A.} and David Richards and Debdulal Roy",

year = "2015",

month = may,

day = "15",

doi = "10.1103/PhysRevB.91.195411",

language = "English",

volume = "91",

journal = "Physical Review B (Condensed Matter and Materials Physics)",

issn = "1098-0121",

publisher = "American Physical Society",

number = "19",

}

TY - JOUR

T1 - Effect of disorder on Raman scattering of single-layer Mo S2

AU - Mignuzzi, Sandro

AU - Pollard, Andrew J.

AU - Bonini, Nicola

AU - Brennan, Barry

AU - Gilmore, Ian S.

AU - Pimenta, Marcos A.

AU - Richards, David

AU - Roy, Debdulal

PY - 2015/5/15

Y1 - 2015/5/15

N2 - We determine the effect of defects induced by ion bombardment on the Raman spectrum of single-layer molybdenum disulfide. The evolution of both the linewidths and frequency shifts of the first-order Raman bands with the density of defects is explained with a phonon confinement model, using density functional theory to calculate the phonon dispersion curves. We identify several defect-induced Raman scattering peaks arising from zone-edge phonon modes. Among these, the most prominent is the LA(M) peak at ∼227cm-1 and its intensity, relative to the one of first-order Raman bands, is found to be proportional to the density of defects. These results provide a practical route to quantify defects in single-layer Mo S2 using Raman spectroscopy and highlight an analogy between the LA(M) peak in Mo S2 and the D peak in graphene.

AB - We determine the effect of defects induced by ion bombardment on the Raman spectrum of single-layer molybdenum disulfide. The evolution of both the linewidths and frequency shifts of the first-order Raman bands with the density of defects is explained with a phonon confinement model, using density functional theory to calculate the phonon dispersion curves. We identify several defect-induced Raman scattering peaks arising from zone-edge phonon modes. Among these, the most prominent is the LA(M) peak at ∼227cm-1 and its intensity, relative to the one of first-order Raman bands, is found to be proportional to the density of defects. These results provide a practical route to quantify defects in single-layer Mo S2 using Raman spectroscopy and highlight an analogy between the LA(M) peak in Mo S2 and the D peak in graphene.

UR - http://www.scopus.com/inward/record.url?scp=84929591465&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.91.195411

DO - 10.1103/PhysRevB.91.195411

M3 - Article

AN - SCOPUS:84929591465

SN - 1098-0121

VL - 91

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

IS - 19

M1 - 195411

ER -

Effect of disorder on Raman scattering of single-layer Mo S₂

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