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Effect of disorder on Raman scattering of single-layer Mo S2

Research output: Contribution to journalArticle

Sandro Mignuzzi, Andrew J. Pollard, Nicola Bonini, Barry Brennan, Ian S. Gilmore, Marcos A. Pimenta, David Richards, Debdulal Roy

Original languageEnglish
Article number195411
Number of pages7
JournalPhysical Review B (Condensed Matter and Materials Physics)
Issue number19
Published11 May 2015


  • PhysRevB.91.195411

    PhysRevB.91.195411.pdf, 369 KB, application/pdf

    Uploaded date:07 Jan 2016

    Version:Final published version

King's Authors


We determine the effect of defects induced by ion bombardment on the Raman spectrum of single-layer molybdenum disulfide. The evolution of both the linewidths and frequency shifts of the first-order Raman bands with the density of defects is explained with a phonon confinement model, using density functional theory to calculate the phonon dispersion curves. We identify several defect-induced Raman scattering peaks arising from zone-edge phonon modes. Among these, the most prominent is the LA(M) peak at ∼227cm-1 and its intensity, relative to the one of first-order Raman bands, is found to be proportional to the density of defects. These results provide a practical route to quantify defects in single-layer Mo S2 using Raman spectroscopy and highlight an analogy between the LA(M) peak in Mo S2 and the D peak in graphene.

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