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Effect of disorder on Raman scattering of single-layer Mo S2

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Effect of disorder on Raman scattering of single-layer Mo S2. / Mignuzzi, Sandro; Pollard, Andrew J.; Bonini, Nicola; Brennan, Barry; Gilmore, Ian S.; Pimenta, Marcos A.; Richards, David; Roy, Debdulal.

In: Physical Review B (Condensed Matter and Materials Physics), Vol. 91, No. 19, 195411, 11.05.2015.

Research output: Contribution to journalArticle

Harvard

Mignuzzi, S, Pollard, AJ, Bonini, N, Brennan, B, Gilmore, IS, Pimenta, MA, Richards, D & Roy, D 2015, 'Effect of disorder on Raman scattering of single-layer Mo S2', Physical Review B (Condensed Matter and Materials Physics), vol. 91, no. 19, 195411. https://doi.org/10.1103/PhysRevB.91.195411

APA

Mignuzzi, S., Pollard, A. J., Bonini, N., Brennan, B., Gilmore, I. S., Pimenta, M. A., Richards, D., & Roy, D. (2015). Effect of disorder on Raman scattering of single-layer Mo S2. Physical Review B (Condensed Matter and Materials Physics), 91(19), [195411]. https://doi.org/10.1103/PhysRevB.91.195411

Vancouver

Mignuzzi S, Pollard AJ, Bonini N, Brennan B, Gilmore IS, Pimenta MA et al. Effect of disorder on Raman scattering of single-layer Mo S2. Physical Review B (Condensed Matter and Materials Physics). 2015 May 11;91(19). 195411. https://doi.org/10.1103/PhysRevB.91.195411

Author

Mignuzzi, Sandro ; Pollard, Andrew J. ; Bonini, Nicola ; Brennan, Barry ; Gilmore, Ian S. ; Pimenta, Marcos A. ; Richards, David ; Roy, Debdulal. / Effect of disorder on Raman scattering of single-layer Mo S2. In: Physical Review B (Condensed Matter and Materials Physics). 2015 ; Vol. 91, No. 19.

Bibtex Download

@article{bc04a1c24cdb4decb4222f845d75cf0d,
title = "Effect of disorder on Raman scattering of single-layer Mo S2",
abstract = "We determine the effect of defects induced by ion bombardment on the Raman spectrum of single-layer molybdenum disulfide. The evolution of both the linewidths and frequency shifts of the first-order Raman bands with the density of defects is explained with a phonon confinement model, using density functional theory to calculate the phonon dispersion curves. We identify several defect-induced Raman scattering peaks arising from zone-edge phonon modes. Among these, the most prominent is the LA(M) peak at ∼227cm-1 and its intensity, relative to the one of first-order Raman bands, is found to be proportional to the density of defects. These results provide a practical route to quantify defects in single-layer Mo S2 using Raman spectroscopy and highlight an analogy between the LA(M) peak in Mo S2 and the D peak in graphene.",
author = "Sandro Mignuzzi and Pollard, {Andrew J.} and Nicola Bonini and Barry Brennan and Gilmore, {Ian S.} and Pimenta, {Marcos A.} and David Richards and Debdulal Roy",
year = "2015",
month = may,
day = "11",
doi = "10.1103/PhysRevB.91.195411",
language = "English",
volume = "91",
journal = "Physical Review B (Condensed Matter and Materials Physics)",
issn = "1098-0121",
publisher = "American Physical Society",
number = "19",

}

RIS (suitable for import to EndNote) Download

TY - JOUR

T1 - Effect of disorder on Raman scattering of single-layer Mo S2

AU - Mignuzzi, Sandro

AU - Pollard, Andrew J.

AU - Bonini, Nicola

AU - Brennan, Barry

AU - Gilmore, Ian S.

AU - Pimenta, Marcos A.

AU - Richards, David

AU - Roy, Debdulal

PY - 2015/5/11

Y1 - 2015/5/11

N2 - We determine the effect of defects induced by ion bombardment on the Raman spectrum of single-layer molybdenum disulfide. The evolution of both the linewidths and frequency shifts of the first-order Raman bands with the density of defects is explained with a phonon confinement model, using density functional theory to calculate the phonon dispersion curves. We identify several defect-induced Raman scattering peaks arising from zone-edge phonon modes. Among these, the most prominent is the LA(M) peak at ∼227cm-1 and its intensity, relative to the one of first-order Raman bands, is found to be proportional to the density of defects. These results provide a practical route to quantify defects in single-layer Mo S2 using Raman spectroscopy and highlight an analogy between the LA(M) peak in Mo S2 and the D peak in graphene.

AB - We determine the effect of defects induced by ion bombardment on the Raman spectrum of single-layer molybdenum disulfide. The evolution of both the linewidths and frequency shifts of the first-order Raman bands with the density of defects is explained with a phonon confinement model, using density functional theory to calculate the phonon dispersion curves. We identify several defect-induced Raman scattering peaks arising from zone-edge phonon modes. Among these, the most prominent is the LA(M) peak at ∼227cm-1 and its intensity, relative to the one of first-order Raman bands, is found to be proportional to the density of defects. These results provide a practical route to quantify defects in single-layer Mo S2 using Raman spectroscopy and highlight an analogy between the LA(M) peak in Mo S2 and the D peak in graphene.

UR - http://www.scopus.com/inward/record.url?scp=84929591465&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.91.195411

DO - 10.1103/PhysRevB.91.195411

M3 - Article

AN - SCOPUS:84929591465

VL - 91

JO - Physical Review B (Condensed Matter and Materials Physics)

JF - Physical Review B (Condensed Matter and Materials Physics)

SN - 1098-0121

IS - 19

M1 - 195411

ER -

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