Electrical behavior of memory devices based on fluorene-containing organic thin films

Panagiotis Dimitrakis; Pascal Normand; Dimitris Tsoukalas; Christopher Pearson; Jin H. Ahn; Mohammed F. Mabrook; Dagou A. Zeze; Michael C. Petty; Kiran T. Kamtekar; Changsheng Wang; Martin R. Bryce; Mark Green

doi:10.1063/1.2968551

Electrical behavior of memory devices based on fluorene-containing organic thin films

Panagiotis Dimitrakis, Pascal Normand, Dimitris Tsoukalas, Christopher Pearson, Jin H. Ahn, Mohammed F. Mabrook, Dagou A. Zeze, Michael C. Petty, Kiran T. Kamtekar, Changsheng Wang, Martin R. Bryce, Mark Green

Imaging Chemistry & Biology

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

We report on switching and negative differential resistance (NDR) behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-{4-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl}-9,9-dihexyl-N,N-diphenyl-fluoren-2-amine. The addition of gold nanoparticles (0.5 wt %) did not change the switching behavior of thicker film structures; however, devices incorporating the nanoparticles showed more reproducible characteristics. In most cases, a "forming" process, in which a large positive voltage was applied to the top Al electrode, was required before the NDR and conductivity switching were observed. Three different electrical conductivity mechanisms have been identified: Poole-Fretikel conductivity in unformed structures, linear current versus voltage characteristics for the ON state in formed devices, and superlinear current versus voltage behavior for the OFF state in formed devices. Models based on metallic filaments or on the injection and storage of charge do not explain all our experimental observations satisfactorily. Instead, an explanation based on the formation of nanocrystalline regions within the thin film is suggested. The devices can be used as two-terminal memory cells operating with unipolar voltage pulses. (C) 2008 American Institute of Physics.

Original language	English
Article number	044510
Journal	Journal of Applied Physics
Volume	104
Issue number	4
DOIs	https://doi.org/10.1063/1.2968551
Publication status	Published - 2008

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@article{f214291e1fb944ac8ef9e20c0bb4c485,

title = "Electrical behavior of memory devices based on fluorene-containing organic thin films",

abstract = "We report on switching and negative differential resistance (NDR) behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-{4-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl}-9,9-dihexyl-N,N-diphenyl-fluoren-2-amine. The addition of gold nanoparticles (0.5 wt %) did not change the switching behavior of thicker film structures; however, devices incorporating the nanoparticles showed more reproducible characteristics. In most cases, a {"}forming{"} process, in which a large positive voltage was applied to the top Al electrode, was required before the NDR and conductivity switching were observed. Three different electrical conductivity mechanisms have been identified: Poole-Fretikel conductivity in unformed structures, linear current versus voltage characteristics for the ON state in formed devices, and superlinear current versus voltage behavior for the OFF state in formed devices. Models based on metallic filaments or on the injection and storage of charge do not explain all our experimental observations satisfactorily. Instead, an explanation based on the formation of nanocrystalline regions within the thin film is suggested. The devices can be used as two-terminal memory cells operating with unipolar voltage pulses. (C) 2008 American Institute of Physics.",

author = "Panagiotis Dimitrakis and Pascal Normand and Dimitris Tsoukalas and Christopher Pearson and Ahn, {Jin H.} and Mabrook, {Mohammed F.} and Zeze, {Dagou A.} and Petty, {Michael C.} and Kamtekar, {Kiran T.} and Changsheng Wang and Bryce, {Martin R.} and Mark Green",

year = "2008",

doi = "10.1063/1.2968551",

language = "English",

volume = "104",

journal = "Journal of Applied Physics",

issn = "1089-7550",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Electrical behavior of memory devices based on fluorene-containing organic thin films

AU - Dimitrakis, Panagiotis

AU - Normand, Pascal

AU - Tsoukalas, Dimitris

AU - Pearson, Christopher

AU - Ahn, Jin H.

AU - Mabrook, Mohammed F.

AU - Zeze, Dagou A.

AU - Petty, Michael C.

AU - Kamtekar, Kiran T.

AU - Wang, Changsheng

AU - Bryce, Martin R.

AU - Green, Mark

PY - 2008

Y1 - 2008

N2 - We report on switching and negative differential resistance (NDR) behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-{4-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl}-9,9-dihexyl-N,N-diphenyl-fluoren-2-amine. The addition of gold nanoparticles (0.5 wt %) did not change the switching behavior of thicker film structures; however, devices incorporating the nanoparticles showed more reproducible characteristics. In most cases, a "forming" process, in which a large positive voltage was applied to the top Al electrode, was required before the NDR and conductivity switching were observed. Three different electrical conductivity mechanisms have been identified: Poole-Fretikel conductivity in unformed structures, linear current versus voltage characteristics for the ON state in formed devices, and superlinear current versus voltage behavior for the OFF state in formed devices. Models based on metallic filaments or on the injection and storage of charge do not explain all our experimental observations satisfactorily. Instead, an explanation based on the formation of nanocrystalline regions within the thin film is suggested. The devices can be used as two-terminal memory cells operating with unipolar voltage pulses. (C) 2008 American Institute of Physics.

AB - We report on switching and negative differential resistance (NDR) behaviors of crossed bar electrode structures based on Al/organic layer/Al devices in which the organic layer was a spin-coated layer of 7-{4-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl}-9,9-dihexyl-N,N-diphenyl-fluoren-2-amine. The addition of gold nanoparticles (0.5 wt %) did not change the switching behavior of thicker film structures; however, devices incorporating the nanoparticles showed more reproducible characteristics. In most cases, a "forming" process, in which a large positive voltage was applied to the top Al electrode, was required before the NDR and conductivity switching were observed. Three different electrical conductivity mechanisms have been identified: Poole-Fretikel conductivity in unformed structures, linear current versus voltage characteristics for the ON state in formed devices, and superlinear current versus voltage behavior for the OFF state in formed devices. Models based on metallic filaments or on the injection and storage of charge do not explain all our experimental observations satisfactorily. Instead, an explanation based on the formation of nanocrystalline regions within the thin film is suggested. The devices can be used as two-terminal memory cells operating with unipolar voltage pulses. (C) 2008 American Institute of Physics.

U2 - 10.1063/1.2968551

DO - 10.1063/1.2968551

M3 - Article

SN - 1089-7550

VL - 104

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 044510

ER -

Electrical behavior of memory devices based on fluorene-containing organic thin films

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