Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration

TY - JOUR

T1 - Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration

AU - De Sio, A

AU - Achard, J

AU - Tallaire, A

AU - Sussman, R S

AU - Collins, A T

AU - Silva, F

AU - Pace, E

PY - 2005/5/23

Y1 - 2005/5/23

N2 - Diamond has been identified as a very promising material for X and ultraviolet sensing. In this Letter, a photoconductive device based on a freestanding homoepitaxial chemically vapor deposition (CVD) single-crystal diamond 500 μ m thick has been tested. Photoconductive measurements in coplanar and transverse configurations have been performed to characterize the device sensitivity in the 140-250 nm spectral range. Very high sensitivity values were achieved in both configurations. The sensitivity in the transverse configuration is at least 300 times higher than in the coplanar configuration. © 2005 American Institute of Physics

AB - Diamond has been identified as a very promising material for X and ultraviolet sensing. In this Letter, a photoconductive device based on a freestanding homoepitaxial chemically vapor deposition (CVD) single-crystal diamond 500 μ m thick has been tested. Photoconductive measurements in coplanar and transverse configurations have been performed to characterize the device sensitivity in the 140-250 nm spectral range. Very high sensitivity values were achieved in both configurations. The sensitivity in the transverse configuration is at least 300 times higher than in the coplanar configuration. © 2005 American Institute of Physics

M3 - Article

VL - 86

SP - 1

EP - 3

JO - APPLIED PHYSICS LETTERS

JF - APPLIED PHYSICS LETTERS

IS - 21

M1 - 213504

ER -