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Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration

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Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration. / De Sio, A; Achard, J; Tallaire, A; Sussman, R S; Collins, A T; Silva, F; Pace, E.

In: APPLIED PHYSICS LETTERS, Vol. 86, No. 21, 213504, 23.05.2005, p. 1-3.

Research output: Contribution to journalArticle

Harvard

De Sio, A, Achard, J, Tallaire, A, Sussman, RS, Collins, AT, Silva, F & Pace, E 2005, 'Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration', APPLIED PHYSICS LETTERS, vol. 86, no. 21, 213504, pp. 1-3.

APA

De Sio, A., Achard, J., Tallaire, A., Sussman, R. S., Collins, A. T., Silva, F., & Pace, E. (2005). Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration. APPLIED PHYSICS LETTERS, 86(21), 1-3. [213504].

Vancouver

De Sio A, Achard J, Tallaire A, Sussman RS, Collins AT, Silva F et al. Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration. APPLIED PHYSICS LETTERS. 2005 May 23;86(21):1-3. 213504.

Author

De Sio, A ; Achard, J ; Tallaire, A ; Sussman, R S ; Collins, A T ; Silva, F ; Pace, E. / Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration. In: APPLIED PHYSICS LETTERS. 2005 ; Vol. 86, No. 21. pp. 1-3.

Bibtex Download

@article{44b0b34b66bd402eb9f476e55ed88a12,
title = "Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration",
abstract = "Diamond has been identified as a very promising material for X and ultraviolet sensing. In this Letter, a photoconductive device based on a freestanding homoepitaxial chemically vapor deposition (CVD) single-crystal diamond 500 μ m thick has been tested. Photoconductive measurements in coplanar and transverse configurations have been performed to characterize the device sensitivity in the 140-250 nm spectral range. Very high sensitivity values were achieved in both configurations. The sensitivity in the transverse configuration is at least 300 times higher than in the coplanar configuration. © 2005 American Institute of Physics",
author = "{De Sio}, A and J Achard and A Tallaire and Sussman, {R S} and Collins, {A T} and F Silva and E Pace",
year = "2005",
month = may,
day = "23",
language = "English",
volume = "86",
pages = "1--3",
journal = "APPLIED PHYSICS LETTERS",
issn = "0003-6951",
publisher = "AIP Publishing",
number = "21",

}

RIS (suitable for import to EndNote) Download

TY - JOUR

T1 - Electro-optical response of a single-crystal diamond ultraviolet photoconductor in transverse configuration

AU - De Sio, A

AU - Achard, J

AU - Tallaire, A

AU - Sussman, R S

AU - Collins, A T

AU - Silva, F

AU - Pace, E

PY - 2005/5/23

Y1 - 2005/5/23

N2 - Diamond has been identified as a very promising material for X and ultraviolet sensing. In this Letter, a photoconductive device based on a freestanding homoepitaxial chemically vapor deposition (CVD) single-crystal diamond 500 μ m thick has been tested. Photoconductive measurements in coplanar and transverse configurations have been performed to characterize the device sensitivity in the 140-250 nm spectral range. Very high sensitivity values were achieved in both configurations. The sensitivity in the transverse configuration is at least 300 times higher than in the coplanar configuration. © 2005 American Institute of Physics

AB - Diamond has been identified as a very promising material for X and ultraviolet sensing. In this Letter, a photoconductive device based on a freestanding homoepitaxial chemically vapor deposition (CVD) single-crystal diamond 500 μ m thick has been tested. Photoconductive measurements in coplanar and transverse configurations have been performed to characterize the device sensitivity in the 140-250 nm spectral range. Very high sensitivity values were achieved in both configurations. The sensitivity in the transverse configuration is at least 300 times higher than in the coplanar configuration. © 2005 American Institute of Physics

M3 - Article

VL - 86

SP - 1

EP - 3

JO - APPLIED PHYSICS LETTERS

JF - APPLIED PHYSICS LETTERS

SN - 0003-6951

IS - 21

M1 - 213504

ER -

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