Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers

TY - JOUR

T1 - Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers

AU - Flores, G. G.Baez

AU - Kovalev, Alexey A.

AU - Van Schilfgaarde, M.

AU - Belashchenko, K. D.

PY - 2020/6/1

Y1 - 2020/6/1

N2 - Spin transport at metallic interfaces is an essential ingredient of various spintronic device concepts, such as giant magnetoresistance, spin-transfer torque, and spin pumping. Spin-orbit coupling plays an important role in many such devices. In particular, spin current is partially absorbed at the interface due to spin-orbit coupling. We develop a general magnetoelectronic circuit theory and generalize the concept of spin-mixing conductance, accounting for various mechanisms responsible for spin-flip scattering. For the special case when exchange interactions dominate, we give a simple expression for the spin-mixing conductance in terms of the contributions responsible for spin relaxation (i.e., spin memory loss), spin torque, and spin precession. The spin memory loss parameter δ is related to spin-flip transmission and reflection probabilities. There is no straightforward relation between spin torque and spin memory loss. We calculate the spin-flip scattering rates for N|N, F|N, and F|F interfaces using the Landauer-Büttiker method within the linear muffin-tin orbital method and determine the values of δ using circuit theory.

AB - Spin transport at metallic interfaces is an essential ingredient of various spintronic device concepts, such as giant magnetoresistance, spin-transfer torque, and spin pumping. Spin-orbit coupling plays an important role in many such devices. In particular, spin current is partially absorbed at the interface due to spin-orbit coupling. We develop a general magnetoelectronic circuit theory and generalize the concept of spin-mixing conductance, accounting for various mechanisms responsible for spin-flip scattering. For the special case when exchange interactions dominate, we give a simple expression for the spin-mixing conductance in terms of the contributions responsible for spin relaxation (i.e., spin memory loss), spin torque, and spin precession. The spin memory loss parameter δ is related to spin-flip transmission and reflection probabilities. There is no straightforward relation between spin torque and spin memory loss. We calculate the spin-flip scattering rates for N|N, F|N, and F|F interfaces using the Landauer-Büttiker method within the linear muffin-tin orbital method and determine the values of δ using circuit theory.

UR - http://www.scopus.com/inward/record.url?scp=85086990758&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.101.224405

DO - 10.1103/PhysRevB.101.224405

M3 - Article

AN - SCOPUS:85086990758

SN - 2469-9950

VL - 101

JO - Physical Review B

JF - Physical Review B

IS - 22

ER -