Growth of epitaxial graphene: Theory and experiment

H. Tetlow; J. Posthuma de Boer; I. J. Ford; D. D. Vvedensky; J. Coraux; L. Kantorovich

doi:10.1016/j.physrep.2014.03.003

Growth of epitaxial graphene: Theory and experiment

H. Tetlow, J. Posthuma de Boer, I. J. Ford, D. D. Vvedensky, J. Coraux, L. Kantorovich^*

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

238 Citations (Scopus)

Abstract

A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed. Thermodynamic and kinetic aspects of growth on all these materials, where possible, are discussed. To make this text useful for a wider audience, a range of important experimental techniques that have been used over the last decade to grow (e.g. CVD, TPG and segregation) and characterize (STM, LEEM, etc.) graphene are reviewed, and a critical survey of most important theoretical techniques is given. Finally, we critically discuss various unsolved problems related to growth and its mechanism which we believe require proper attention in future research.

Original language	English
Pages (from-to)	195-295
Number of pages	101
Journal	Physics Reports
Volume	542
Issue number	3
DOIs	https://doi.org/10.1016/j.physrep.2014.03.003
Publication status	Published - 1 Jan 2014

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10.1016/j.physrep.2014.03.003

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abstract = "A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed. Thermodynamic and kinetic aspects of growth on all these materials, where possible, are discussed. To make this text useful for a wider audience, a range of important experimental techniques that have been used over the last decade to grow (e.g. CVD, TPG and segregation) and characterize (STM, LEEM, etc.) graphene are reviewed, and a critical survey of most important theoretical techniques is given. Finally, we critically discuss various unsolved problems related to growth and its mechanism which we believe require proper attention in future research.",

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AU - Tetlow, H.

AU - Posthuma de Boer, J.

AU - Ford, I. J.

AU - Vvedensky, D. D.

AU - Coraux, J.

AU - Kantorovich, L.

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AB - A detailed review of the literature for the last 5-10 years on epitaxial growth of graphene is presented. Both experimental and theoretical aspects related to growth on transition metals and on silicon carbide are thoroughly reviewed. Thermodynamic and kinetic aspects of growth on all these materials, where possible, are discussed. To make this text useful for a wider audience, a range of important experimental techniques that have been used over the last decade to grow (e.g. CVD, TPG and segregation) and characterize (STM, LEEM, etc.) graphene are reviewed, and a critical survey of most important theoretical techniques is given. Finally, we critically discuss various unsolved problems related to growth and its mechanism which we believe require proper attention in future research.

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Growth of epitaxial graphene: Theory and experiment

Abstract

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