Infrared single-photon detection by two-photon absorption in silicon

Alex Hayat*, Pavel Ginzburg, Meir Orenstein

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

We propose a scheme for infrared single-photon detection based on two-photon absorption at room temperature in Si avalanche photodiodes, where the detected photon's energy is lower than the band gap and the energy difference is complemented by a pump field. A quantum nonperturbative model is developed for nondegenerate two- photon absorption in direct and indirect semiconductors yielding proper nondivergent rates allowing device efficiency optimization. The proposed monolithic detector is simple, miniature, and integrable and does not require phase matching, while not compromising the performance and exhibiting even better efficiency than the competing up- conversion schemes ( similar to 1 order of magnitude ) for similar optical pump levels.

Original languageEnglish
Article number125219
Number of pages4
JournalPhysical Review B (Condensed Matter and Materials Physics)
Volume77
Issue number12
DOIs
Publication statusPublished - Mar 2008

Keywords

  • SEMICONDUCTOR-LASERS
  • GAIN

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