Measurement and Model of the Infrared Two-Photon Emission Spectrum of GaAs

Alex Hayat*, Pavel Ginzburg, Meir Orenstein

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.

Original languageEnglish
Article number023601
Number of pages4
JournalPhysical Review Letters
Volume103
Issue number2
DOIs
Publication statusPublished - 10 Jul 2009

Keywords

  • PHOTOCURRENT
  • SEMICONDUCTORS
  • CRITICAL-POINTS
  • SOLIDS
  • SCATTERING
  • TRANSITION
  • BROADENINGS
  • GOLDEN-RULE
  • ABSORPTION
  • DEPENDENCE

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