Measurement and Model of the Infrared Two-Photon Emission Spectrum of GaAs

Alex Hayat; Pavel Ginzburg; Meir Orenstein

doi:10.1103/PhysRevLett.103.023601

Measurement and Model of the Infrared Two-Photon Emission Spectrum of GaAs

Alex Hayat^*, Pavel Ginzburg, Meir Orenstein

^*Corresponding author for this work

Physics

Technion Israel Institute of Technology

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.

Original language	English
Article number	023601
Number of pages	4
Journal	Physical Review Letters
Volume	103
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevLett.103.023601
Publication status	Published - 10 Jul 2009

Keywords

PHOTOCURRENT
SEMICONDUCTORS
CRITICAL-POINTS
SOLIDS
SCATTERING
TRANSITION
BROADENINGS
GOLDEN-RULE
ABSORPTION
DEPENDENCE

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10.1103/PhysRevLett.103.023601

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title = "Measurement and Model of the Infrared Two-Photon Emission Spectrum of GaAs",

abstract = "Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.",

keywords = "PHOTOCURRENT, SEMICONDUCTORS, CRITICAL-POINTS, SOLIDS, SCATTERING, TRANSITION, BROADENINGS, GOLDEN-RULE, ABSORPTION, DEPENDENCE",

author = "Alex Hayat and Pavel Ginzburg and Meir Orenstein",

year = "2009",

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day = "10",

doi = "10.1103/PhysRevLett.103.023601",

language = "English",

volume = "103",

journal = "Physical Review Letters",

issn = "0031-9007",

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T1 - Measurement and Model of the Infrared Two-Photon Emission Spectrum of GaAs

AU - Hayat, Alex

AU - Ginzburg, Pavel

AU - Orenstein, Meir

PY - 2009/7/10

Y1 - 2009/7/10

N2 - Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.

AB - Two-photon emission from semiconductors was recently observed, but not fully interpreted. We develop a dressed-state model incorporating intraband scattering-related level broadening, yielding nondivergent emission rates. The spectrum calculations for high carrier concentrations including the time dependence of the screening buildup correspond well to our measured two-photon emission spectrum from GaAs.

KW - PHOTOCURRENT

KW - SEMICONDUCTORS

KW - CRITICAL-POINTS

KW - SOLIDS

KW - SCATTERING

KW - TRANSITION

KW - BROADENINGS

KW - GOLDEN-RULE

KW - ABSORPTION

KW - DEPENDENCE

U2 - 10.1103/PhysRevLett.103.023601

DO - 10.1103/PhysRevLett.103.023601

M3 - Article

SN - 0031-9007

VL - 103

JO - Physical Review Letters

JF - Physical Review Letters

IS - 2

M1 - 023601

ER -

Measurement and Model of the Infrared Two-Photon Emission Spectrum of GaAs

Abstract

Keywords

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