One-Particle and Excitonic Band Structure in Cubic Boron Arsenide

Swagata Acharya*, Dimitar Pashov, Mikhail I. Katsnelson, Mark van Schilfgaarde

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Cubic BAs has received recent attention for its large electron and hole mobilities and large thermal conductivity. This is a rare and much desired combination in semiconductor industry: commercial semiconductors typically have high electron mobilities, or hole mobilities, or large thermal conductivities, but not all of them together. Herein, predictions from an advanced self-consistent many-body perturbative theory are reported and it is shown that with respect to one-particle properties, BAs is strikingly similar to Si. There are some important differences, notably there is an unusually small variation in the valence band masses. With respect to two-particle properties, significant differences with Si appear. The excitonic spectrum for both q = 0 and finite q is reported, and it is shown that while the direct gap in cubic BAs is about 4 eV, dark excitons can be observed down to about ≈1.5 eV, which may play a crucial role in application of BAs in optoelectronics.

Original languageEnglish
Article number2300156
JournalPhysica Status Solidi - Rapid Research Letters
Volume18
Issue number1
DOIs
Publication statusPublished - Jan 2024

Keywords

  • dark excitons
  • isotropic hole massses
  • Luttinger parameters
  • optoelectronics

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