Photo- and Electroluminescence from Zn-Doped InN Semiconductor Nanocrystals

Simon M. Fairclough; Peter N. Taylor; Charles T. Smith; Pip C.J. Clark; Stefan Skalsky; Ruben Ahumada-Lazo; Edward A. Lewis; Daniel J. Tate; Ben F. Spencer; Mary Burkitt-Gray; P. Igor; Federica Bondino; Patrick Bergstrom-Mann; Sadie Carter-Searjeant; Michael L. Turner; David Binks; Sarah J. Haigh; Wendy R. Flavell; Richard J. Curry; Mark A. Green

doi:10.1002/adom.202000604

Photo- and Electroluminescence from Zn-Doped InN Semiconductor Nanocrystals

Simon M. Fairclough, Peter N. Taylor, Charles T. Smith, Pip C.J. Clark, Stefan Skalsky, Ruben Ahumada-Lazo, Edward A. Lewis, Daniel J. Tate, Ben F. Spencer, Mary Burkitt-Gray, P. Igor, Federica Bondino, Patrick Bergstrom-Mann, Sadie Carter-Searjeant, Michael L. Turner, David Binks, Sarah J. Haigh, Wendy R. Flavell, Richard J. Curry, Mark A. Green^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

There is a critical research need for efficient luminescent colloidal nanocrystals, free from cadmium and lead whose toxicity subjects them to usage restrictions, with applications from display devices to biology. Approaches to directly replace cadmium-based materials have mainly focused on indium phosphide-based nanocrystals, however these too are subject to concerns over toxicity. Few other alternatives have been found that can compete with the emission range and efficiency of Cd- and Pb-based nanocrystals. Group III-nitride nanocrystals, and their alloys, offer the exciting potential to tune bandgap energies from the ultraviolet to the near infrared yet a robust route toward efficient luminescent nitride nanocrystals is lacking. Here, the synthesis of photoluminescent indium zinc nitride quantum dots exhibiting tunable emission through the visible to near infrared spectra region, with quantum yields of up to 30% is reported. Capping the nanocrystals with both a GaN and ZnS shell significantly increases air stability and emission quantum yields. A proof-of-principle indium zinc nitride nanocrystal light emitting diode is also demonstrated. This work overcomes the significant challenges that have prevented the full exploration of nitride-based semiconductor nanocrystal development, providing a new system for further exploration as a heavy-metal free alternative to current state-of-the-art materials.

Original language	English
Article number	2000604
Journal	Advanced Optical Materials
Volume	8
Issue number	18
DOIs	https://doi.org/10.1002/adom.202000604
Publication status	Published - 1 Sept 2020

Keywords

indium zinc nitride
luminescence
nanocrystals
quantum dots

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10.1002/adom.202000604

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Fairclough, S. M., Taylor, P. N., Smith, C. T., Clark, P. C. J., Skalsky, S., Ahumada-Lazo, R., Lewis, E. A., Tate, D. J., Spencer, B. F., Burkitt-Gray, M., Igor, P., Bondino, F., Bergstrom-Mann, P., Carter-Searjeant, S., Turner, M. L., Binks, D., Haigh, S. J., Flavell, W. R., Curry, R. J., & Green, M. A. (2020). Photo- and Electroluminescence from Zn-Doped InN Semiconductor Nanocrystals. Advanced Optical Materials, 8(18), Article 2000604. https://doi.org/10.1002/adom.202000604

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title = "Photo- and Electroluminescence from Zn-Doped InN Semiconductor Nanocrystals",

abstract = "There is a critical research need for efficient luminescent colloidal nanocrystals, free from cadmium and lead whose toxicity subjects them to usage restrictions, with applications from display devices to biology. Approaches to directly replace cadmium-based materials have mainly focused on indium phosphide-based nanocrystals, however these too are subject to concerns over toxicity. Few other alternatives have been found that can compete with the emission range and efficiency of Cd- and Pb-based nanocrystals. Group III-nitride nanocrystals, and their alloys, offer the exciting potential to tune bandgap energies from the ultraviolet to the near infrared yet a robust route toward efficient luminescent nitride nanocrystals is lacking. Here, the synthesis of photoluminescent indium zinc nitride quantum dots exhibiting tunable emission through the visible to near infrared spectra region, with quantum yields of up to 30% is reported. Capping the nanocrystals with both a GaN and ZnS shell significantly increases air stability and emission quantum yields. A proof-of-principle indium zinc nitride nanocrystal light emitting diode is also demonstrated. This work overcomes the significant challenges that have prevented the full exploration of nitride-based semiconductor nanocrystal development, providing a new system for further exploration as a heavy-metal free alternative to current state-of-the-art materials.",

keywords = "indium zinc nitride, luminescence, nanocrystals, quantum dots",

author = "Fairclough, {Simon M.} and Taylor, {Peter N.} and Smith, {Charles T.} and Clark, {Pip C.J.} and Stefan Skalsky and Ruben Ahumada-Lazo and Lewis, {Edward A.} and Tate, {Daniel J.} and Spencer, {Ben F.} and Mary Burkitt-Gray and P. Igor and Federica Bondino and Patrick Bergstrom-Mann and Sadie Carter-Searjeant and Turner, {Michael L.} and David Binks and Haigh, {Sarah J.} and Flavell, {Wendy R.} and Curry, {Richard J.} and Green, {Mark A.}",

year = "2020",

month = sep,

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doi = "10.1002/adom.202000604",

language = "English",

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Fairclough, SM, Taylor, PN, Smith, CT, Clark, PCJ, Skalsky, S, Ahumada-Lazo, R, Lewis, EA, Tate, DJ, Spencer, BF, Burkitt-Gray, M, Igor, P, Bondino, F, Bergstrom-Mann, P , Carter-Searjeant, S, Turner, ML, Binks, D, Haigh, SJ, Flavell, WR, Curry, RJ & Green, MA 2020, 'Photo- and Electroluminescence from Zn-Doped InN Semiconductor Nanocrystals', Advanced Optical Materials, vol. 8, no. 18, 2000604. https://doi.org/10.1002/adom.202000604

TY - JOUR

T1 - Photo- and Electroluminescence from Zn-Doped InN Semiconductor Nanocrystals

AU - Fairclough, Simon M.

AU - Taylor, Peter N.

AU - Smith, Charles T.

AU - Clark, Pip C.J.

AU - Skalsky, Stefan

AU - Ahumada-Lazo, Ruben

AU - Lewis, Edward A.

AU - Tate, Daniel J.

AU - Spencer, Ben F.

AU - Burkitt-Gray, Mary

AU - Igor, P.

AU - Bondino, Federica

AU - Bergstrom-Mann, Patrick

AU - Carter-Searjeant, Sadie

AU - Turner, Michael L.

AU - Binks, David

AU - Haigh, Sarah J.

AU - Flavell, Wendy R.

AU - Curry, Richard J.

AU - Green, Mark A.

PY - 2020/9/1

Y1 - 2020/9/1

N2 - There is a critical research need for efficient luminescent colloidal nanocrystals, free from cadmium and lead whose toxicity subjects them to usage restrictions, with applications from display devices to biology. Approaches to directly replace cadmium-based materials have mainly focused on indium phosphide-based nanocrystals, however these too are subject to concerns over toxicity. Few other alternatives have been found that can compete with the emission range and efficiency of Cd- and Pb-based nanocrystals. Group III-nitride nanocrystals, and their alloys, offer the exciting potential to tune bandgap energies from the ultraviolet to the near infrared yet a robust route toward efficient luminescent nitride nanocrystals is lacking. Here, the synthesis of photoluminescent indium zinc nitride quantum dots exhibiting tunable emission through the visible to near infrared spectra region, with quantum yields of up to 30% is reported. Capping the nanocrystals with both a GaN and ZnS shell significantly increases air stability and emission quantum yields. A proof-of-principle indium zinc nitride nanocrystal light emitting diode is also demonstrated. This work overcomes the significant challenges that have prevented the full exploration of nitride-based semiconductor nanocrystal development, providing a new system for further exploration as a heavy-metal free alternative to current state-of-the-art materials.

AB - There is a critical research need for efficient luminescent colloidal nanocrystals, free from cadmium and lead whose toxicity subjects them to usage restrictions, with applications from display devices to biology. Approaches to directly replace cadmium-based materials have mainly focused on indium phosphide-based nanocrystals, however these too are subject to concerns over toxicity. Few other alternatives have been found that can compete with the emission range and efficiency of Cd- and Pb-based nanocrystals. Group III-nitride nanocrystals, and their alloys, offer the exciting potential to tune bandgap energies from the ultraviolet to the near infrared yet a robust route toward efficient luminescent nitride nanocrystals is lacking. Here, the synthesis of photoluminescent indium zinc nitride quantum dots exhibiting tunable emission through the visible to near infrared spectra region, with quantum yields of up to 30% is reported. Capping the nanocrystals with both a GaN and ZnS shell significantly increases air stability and emission quantum yields. A proof-of-principle indium zinc nitride nanocrystal light emitting diode is also demonstrated. This work overcomes the significant challenges that have prevented the full exploration of nitride-based semiconductor nanocrystal development, providing a new system for further exploration as a heavy-metal free alternative to current state-of-the-art materials.

KW - indium zinc nitride

KW - luminescence

KW - nanocrystals

KW - quantum dots

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U2 - 10.1002/adom.202000604

DO - 10.1002/adom.202000604

M3 - Article

AN - SCOPUS:85086446088

SN - 2195-1071

VL - 8

JO - Advanced Optical Materials

JF - Advanced Optical Materials

IS - 18

M1 - 2000604

ER -

Photo- and Electroluminescence from Zn-Doped InN Semiconductor Nanocrystals

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Keywords

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