Possible phonon-induced electronic bi-stability in VO2 for ultrafast memory at room temperature

Yong Tan; Hang Zhao; Liangliang Zhangyan Yan; Liangliang Zhang; Yan Zhang; Cedric Weber; Swagata Acharya; Brian Cunningham; Myrta Gruning; Kai Liu; Mark Van Schilfgaarde; Mostafa Shalaby

doi:10.1109/IRMMW-THz.2019.8874246

Possible phonon-induced electronic bi-stability in VO₂ for ultrafast memory at room temperature

Yong Tan, Hang Zhao, Liangliang Zhangyan Yan, Liangliang Zhang, Yan Zhang, Cedric Weber, Swagata Acharya, Brian Cunningham, Myrta Gruning, Kai Liu, Mark Van Schilfgaarde, Mostafa Shalaby

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

2 Citations (Scopus)

Abstract

VO₂ is a model material system which exhibits a metal to insulator transition at T = 67°C thus holds potential for future ultrafast storage. There is a controversy on whether the IMT in VO₂ is purely electronic, or is driven by lattice distortions. However, the purely electronic process is more meaningful in ultrafast switching. We found a new electron-phonon pathway for a purely reversible electronic transition in a true bi-stable fashion under specific conditions. This finding will prompt the design of future ultrafast electro-resistive non-volatile memory devices.

Original language	English
Title of host publication	IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves
Publisher	IEEE Computer Society
Volume	2019-September
ISBN (Electronic)	9781538682852
DOIs	https://doi.org/10.1109/IRMMW-THz.2019.8874246
Publication status	Published - 1 Sept 2019
Event	44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 - Paris, France Duration: 1 Sept 2019 → 6 Sept 2019

Conference

Conference	44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019
Country/Territory	France
City	Paris
Period	1/09/2019 → 6/09/2019

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10.1109/IRMMW-THz.2019.8874246

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Tan, Y., Zhao, H., Yan, L. Z., Zhang, L., Zhang, Y., Weber, C., Acharya, S., Cunningham, B., Gruning, M., Liu, K., Schilfgaarde, M. V., & Shalaby, M. (2019). Possible phonon-induced electronic bi-stability in VO₂ for ultrafast memory at room temperature. In IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves (Vol. 2019-September). Article 8874246 IEEE Computer Society. https://doi.org/10.1109/IRMMW-THz.2019.8874246

@inbook{743509839bea49529426e61d41c508b1,

title = "Possible phonon-induced electronic bi-stability in VO2 for ultrafast memory at room temperature",

abstract = "VO2 is a model material system which exhibits a metal to insulator transition at T = 67°C thus holds potential for future ultrafast storage. There is a controversy on whether the IMT in VO2 is purely electronic, or is driven by lattice distortions. However, the purely electronic process is more meaningful in ultrafast switching. We found a new electron-phonon pathway for a purely reversible electronic transition in a true bi-stable fashion under specific conditions. This finding will prompt the design of future ultrafast electro-resistive non-volatile memory devices.",

author = "Yong Tan and Hang Zhao and Yan, {Liangliang Zhangyan} and Liangliang Zhang and Yan Zhang and Cedric Weber and Swagata Acharya and Brian Cunningham and Myrta Gruning and Kai Liu and Schilfgaarde, {Mark Van} and Mostafa Shalaby",

year = "2019",

month = sep,

day = "1",

doi = "10.1109/IRMMW-THz.2019.8874246",

language = "English",

volume = "2019-September",

booktitle = "IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves",

publisher = "IEEE Computer Society",

note = "44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019 ; Conference date: 01-09-2019 Through 06-09-2019",

}

Tan, Y, Zhao, H, Yan, LZ, Zhang, L, Zhang, Y, Weber, C , Acharya, S, Cunningham, B, Gruning, M, Liu, K, Schilfgaarde, MV & Shalaby, M 2019, Possible phonon-induced electronic bi-stability in VO₂ for ultrafast memory at room temperature. in IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves. vol. 2019-September, 8874246, IEEE Computer Society, 44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019, Paris, France, 1/09/2019. https://doi.org/10.1109/IRMMW-THz.2019.8874246

Possible phonon-induced electronic bi-stability in VO₂ for ultrafast memory at room temperature. / Tan, Yong; Zhao, Hang; Yan, Liangliang Zhangyan et al.
IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves. Vol. 2019-September IEEE Computer Society, 2019. 8874246.

Research output: Chapter in Book/Report/Conference proceeding › Conference paper › peer-review

TY - CHAP

T1 - Possible phonon-induced electronic bi-stability in VO2 for ultrafast memory at room temperature

AU - Tan, Yong

AU - Zhao, Hang

AU - Yan, Liangliang Zhangyan

AU - Zhang, Liangliang

AU - Zhang, Yan

AU - Weber, Cedric

AU - Acharya, Swagata

AU - Cunningham, Brian

AU - Gruning, Myrta

AU - Liu, Kai

AU - Schilfgaarde, Mark Van

AU - Shalaby, Mostafa

PY - 2019/9/1

Y1 - 2019/9/1

N2 - VO2 is a model material system which exhibits a metal to insulator transition at T = 67°C thus holds potential for future ultrafast storage. There is a controversy on whether the IMT in VO2 is purely electronic, or is driven by lattice distortions. However, the purely electronic process is more meaningful in ultrafast switching. We found a new electron-phonon pathway for a purely reversible electronic transition in a true bi-stable fashion under specific conditions. This finding will prompt the design of future ultrafast electro-resistive non-volatile memory devices.

AB - VO2 is a model material system which exhibits a metal to insulator transition at T = 67°C thus holds potential for future ultrafast storage. There is a controversy on whether the IMT in VO2 is purely electronic, or is driven by lattice distortions. However, the purely electronic process is more meaningful in ultrafast switching. We found a new electron-phonon pathway for a purely reversible electronic transition in a true bi-stable fashion under specific conditions. This finding will prompt the design of future ultrafast electro-resistive non-volatile memory devices.

UR - http://www.scopus.com/inward/record.url?scp=85074685192&partnerID=8YFLogxK

U2 - 10.1109/IRMMW-THz.2019.8874246

DO - 10.1109/IRMMW-THz.2019.8874246

M3 - Conference paper

AN - SCOPUS:85074685192

VL - 2019-September

BT - IRMMW-THz 2019 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves

PB - IEEE Computer Society

T2 - 44th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2019

Y2 - 1 September 2019 through 6 September 2019

ER -

Possible phonon-induced electronic bi-stability in VO₂ for ultrafast memory at room temperature

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