Abstract
The Raman scattering D-peak in graphene is spatially localised in close proximity to defects. Here, we demonstrate the capability of tip-enhanced Raman spectroscopy (TERS) to probe individual point defects, even for a graphene layer with an extremely low defect density. This is of practical interest for future graphene electronic devices. The measured TERS spectra enable a direct determination of the average inter-defect distance within the graphene sheet. Analysis of the TERS enhancement factor of the graphene Raman peaks highlights the preferential enhancement and symmetry-dependent selectivity of the D-peak intensity caused by zero-dimensional Raman scatterers.
Original language | English |
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Pages (from-to) | 19413-19418 |
Number of pages | 6 |
Journal | Nanoscale |
Volume | 7 |
Issue number | 46 |
DOIs | |
Publication status | Published - 14 Dec 2015 |