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Probing individual point defects in graphene via near-field Raman scattering

Research output: Contribution to journalArticle

Sandro Mignuzzi, Naresh Kumar, Barry Brennan, Ian S. Gilmore, David Richards, Andrew J. Pollard, Debdulal Roy

Original languageEnglish
Pages (from-to)19413-19418
Number of pages6
JournalNanoscale
Volume7
Issue number46
DOIs
Published14 Dec 2015

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Abstract

The Raman scattering D-peak in graphene is spatially localised in close proximity to defects. Here, we demonstrate the capability of tip-enhanced Raman spectroscopy (TERS) to probe individual point defects, even for a graphene layer with an extremely low defect density. This is of practical interest for future graphene electronic devices. The measured TERS spectra enable a direct determination of the average inter-defect distance within the graphene sheet. Analysis of the TERS enhancement factor of the graphene Raman peaks highlights the preferential enhancement and symmetry-dependent selectivity of the D-peak intensity caused by zero-dimensional Raman scatterers.

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