Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

TY - JOUR

T1 - Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

AU - Harding, R

AU - Davies, G

AU - Coleman, P G

AU - Burrows, C P

AU - Wong-Leung, J

PY - 2003/12/31

Y1 - 2003/12/31

N2 - We report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 10(12)-10(14)cm(-2) measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600degreesC and assess the circumstances in which PL can be used as a quantitative technique. (C) 2003 Elsevier B.V. All rights reserved.

AB - We report data on high-quality silicon samples implanted with 4 MeV silicon ions at doses of 10(12)-10(14)cm(-2) measured using variable energy positron annihilation spectroscopy (VEPAS) and photoluminescence (PL). Individual, mainly interstitial related, defect centres can be observed with PL, and the average depth and concentration of vacancy clusters (assuming di-vacancies) can be found with VEPAS. We measure these samples as functions of dose and annealing from room temperature to 600degreesC and assess the circumstances in which PL can be used as a quantitative technique. (C) 2003 Elsevier B.V. All rights reserved.

UR - https://www.scopus.com/pages/publications/0347764762

M3 - Conference paper

VL - 340

SP - 738

EP - 742

JO - PHYSICA B

JF - PHYSICA B

T2 - 22nd International Conference on Defects in Semiconductors (ICDS-22)

Y2 - 1 January 2003

ER -