Study of dislocations and stress in silicon-on-insulator tubs using transmission electron microscopy and finite element modelling

TY - CHAP

T1 - Study of dislocations and stress in silicon-on-insulator tubs using transmission electron microscopy and finite element modelling

AU - McMullan, AJ

AU - O'Mahoney, D

AU - Nevin, WA

AU - Paxton, AT

AU - Gregg, JM

PY - 2003

Y1 - 2003

N2 - The stress resulting from the fabrication of trenched and refilled SOI tubs was modelled using Finite Elements to attempt to predict the resultant slipped structure. High resolution TEM has been used to investigate this slip and the dislocations introduced into the structure during fabrication. The stress is found to be significantly greater at the corners of the trench than the bulk silicon in the tub prior to filling with TEOS and polysilicon. In the completed structure the corners of the tubs remain at higher stress than the bulk of the tub. Tubs showing surface slip were examined using TEM and clear evidence of dislocations originating from the tub corners could occasionally be seen. However on the whole it was found that few dislocations remained in the tub following processing and a step on the surface indicated that those produced had propagated out to the surface.

AB - The stress resulting from the fabrication of trenched and refilled SOI tubs was modelled using Finite Elements to attempt to predict the resultant slipped structure. High resolution TEM has been used to investigate this slip and the dislocations introduced into the structure during fabrication. The stress is found to be significantly greater at the corners of the trench than the bulk silicon in the tub prior to filling with TEOS and polysilicon. In the completed structure the corners of the tubs remain at higher stress than the bulk of the tub. Tubs showing surface slip were examined using TEM and clear evidence of dislocations originating from the tub corners could occasionally be seen. However on the whole it was found that few dislocations remained in the tub following processing and a step on the surface indicated that those produced had propagated out to the surface.

KW - SPECIMEN PREPARATION

M3 - Conference paper

SN - 1-56677-402-0

T3 - ELECTROCHEMICAL SOCIETY SERIES

SP - 39

EP - 48

BT - SEMICONDUCTOR WAFER BONDING VII: SCIENCE, TECHNOLOGY, AND APPLICATIONS, PROCEEDINGS

A2 - Bengtsson, S

A2 - Baumgart, H

A2 - Hunt, CE

A2 - Suga, T

PB - ELECTROCHEMICAL SOCIETY INC

CY - PENNINGTON

T2 - 7th International Symposium on Semiconductor Wafer Bonding

Y2 - 1 April 2003 through 1 May 2003

ER -