Abstract
The group 13 monoalkoxometallanes [Me2Ga(OC(CH3) 2CH2OMe)]2 (1) and [Me 2In(OCH(CH3)CH2OMe)]2 (2), incorporating donor functionalised alkoxides, were synthesised from the reaction of GaMe3 or InMe3 with ROH (R=C(CH3) 2CH2OMe (1); R=CH(CH3)CH2OMe (2)) in toluene. X-ray crystallography showed that both compounds adopt dimeric structures with a planar M2O2 ring, and each group 13 atom is coordinated in a distorted trigonal bipyramidal geometry. The AACVD reaction of GaMe3 and ROH (R =C(CH3)2CH2OMe, CH2CH2OMe, CH2CH2NMe2) resulted in the formation of thin films of Ga2O3 on glass substrates at 450°C. The gallium oxide films were analyzed by scanning electron microscopy, X-ray powder diffraction, energy dispersive analysis of X-rays, wavelength dispersive analysis of X-rays and X-ray photoelectron spectroscopy. This CVD technique offers a rapid, convenient route to Ga 2O3, which involves the in situ formation of dimethylgallium alkoxides, of the type [Me2Ga(μ-OR)]2 similar to compound 1.
Original language | English |
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Pages (from-to) | 31-40 |
Number of pages | 10 |
Journal | Main Group Chemistry |
Volume | 9 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2010 |
Keywords
- CVD
- Gallium alkoxide
- indium alkoxide
- synthesis