Tantalum and titanium doped In 2O 3 thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties

Leanne G. Bloor; Joe Manzi; Russell Binions; Ivan P. Parkin; David Pugh; Ayo Afonja; Christopher S. Blackman; Sanjayan Sathasivam; Claire J. Carmalt

doi:10.1021/cm300596c

Tantalum and titanium doped In ₂O ₃ thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties

Leanne G. Bloor, Joe Manzi, Russell Binions, Ivan P. Parkin, David Pugh, Ayo Afonja, Christopher S. Blackman, Sanjayan Sathasivam, Claire J. Carmalt^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

67 Citations (Scopus)

Abstract

In ₂O ₃ and In ₂O ₃:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In ₂O ₃:M thin films were found to contain 6.5 and 2.3 at.% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In ₂O ₃:Ta) thin films showed a superior response, compared to In ₂O ₃, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO ₂. Considerable selectivity to ethanol was observed; the greatest gas response (R/R ₀) was 16.95 to 100 ppm ethanol.

Original language	English
Pages (from-to)	2864-2871
Number of pages	8
Journal	CHEMISTRY OF MATERIALS
Volume	24
Issue number	15
DOIs	https://doi.org/10.1021/cm300596c
Publication status	Published - 14 Aug 2012

Keywords

CVD
gas sensing
indium oxide
tantalum doping
titanium doping

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10.1021/cm300596c

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@article{f04a85ade80349c2a80561857ad74da2,

title = "Tantalum and titanium doped In 2O 3 thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties",

abstract = "In 2O 3 and In 2O 3:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In 2O 3:M thin films were found to contain 6.5 and 2.3 at.% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In 2O 3:Ta) thin films showed a superior response, compared to In 2O 3, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO 2. Considerable selectivity to ethanol was observed; the greatest gas response (R/R 0) was 16.95 to 100 ppm ethanol.",

keywords = "CVD, gas sensing, indium oxide, tantalum doping, titanium doping",

author = "Bloor, {Leanne G.} and Joe Manzi and Russell Binions and Parkin, {Ivan P.} and David Pugh and Ayo Afonja and Blackman, {Christopher S.} and Sanjayan Sathasivam and Carmalt, {Claire J.}",

year = "2012",

month = aug,

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doi = "10.1021/cm300596c",

language = "English",

volume = "24",

pages = "2864--2871",

journal = "CHEMISTRY OF MATERIALS",

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T1 - Tantalum and titanium doped In 2O 3 thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties

AU - Bloor, Leanne G.

AU - Manzi, Joe

AU - Binions, Russell

AU - Parkin, Ivan P.

AU - Pugh, David

AU - Afonja, Ayo

AU - Blackman, Christopher S.

AU - Sathasivam, Sanjayan

AU - Carmalt, Claire J.

PY - 2012/8/14

Y1 - 2012/8/14

N2 - In 2O 3 and In 2O 3:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In 2O 3:M thin films were found to contain 6.5 and 2.3 at.% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In 2O 3:Ta) thin films showed a superior response, compared to In 2O 3, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO 2. Considerable selectivity to ethanol was observed; the greatest gas response (R/R 0) was 16.95 to 100 ppm ethanol.

AB - In 2O 3 and In 2O 3:M (M = Ti or Ta) thin films were deposited on glass substrates via aerosol-assisted chemical deposition (AACVD) at 450 °C. The resulting films were characterized by a range of techniques including glancing-angle X-ray diffraction, scanning electron microscopy, wavelength dispersive analysis of X-rays, and optical transmission/reflectance studies to investigate the effect of doping on the films. The In 2O 3:M thin films were found to contain 6.5 and 2.3 at.% of Ti and Ta, respectively. The gas sensing properties were investigated on films deposited onto gas sensing substrates via AACVD. Tantalum doped indium oxide (In 2O 3:Ta) thin films showed a superior response, compared to In 2O 3, to a number of reducing gases (ethanol, CO, ammonia) and also the oxidizing gas NO 2. Considerable selectivity to ethanol was observed; the greatest gas response (R/R 0) was 16.95 to 100 ppm ethanol.

KW - CVD

KW - gas sensing

KW - indium oxide

KW - tantalum doping

KW - titanium doping

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U2 - 10.1021/cm300596c

DO - 10.1021/cm300596c

M3 - Article

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SN - 0897-4756

VL - 24

SP - 2864

EP - 2871

JO - CHEMISTRY OF MATERIALS

JF - CHEMISTRY OF MATERIALS

IS - 15

ER -

Tantalum and titanium doped In ₂O ₃ thin films by aerosol-assisted chemical vapor deposition and their gas sensing properties

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Keywords

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