The influence of residual gas on boron carbide thin films prepared by magnetron sputtering

Hui Jiang; Jingtao Zhu; Qiushi Huang; Jing Xu; Xiaoqiang Wang; Zhanshan Wang; Slawka Pfauntsch; Alan Michette

doi:10.1016/j.apsusc.2011.06.113

The influence of residual gas on boron carbide thin films prepared by magnetron sputtering

Hui Jiang, Jingtao Zhu, Qiushi Huang, Jing Xu, Xiaoqiang Wang, Zhanshan Wang, Slawka Pfauntsch, Alan Michette

Physics

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Boron carbide (B4C) thin films were prepared by magnetron sputtering and residual gas impurities in the films were analyzed by X-ray photoelectron spectroscopy. The impurities, mainly oxygen, decrease with improving vacuum. By using argon ion beam etching of the films, the atomic concentration was measured as a function of etching depth. The binding energy spectra were analyzed using wavelet transform and curve fitting, showing that most of the oxygen impurity is in the form of boron oxides, and that the impurities are physically trapped among columnar structures in the film. In order to improve the base vacuum before coating the film, a range of methods were used, including argon gas filling on the target surface and titanium pre-sputtering. The experimental results show that the latter is an efficient and feasible method. Based on the titanium pre-sputtering technology, the optical performance of W/B4C multilayer was improved so much. (C) 2011 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	9946 - 9952
Number of pages	7
Journal	APPLIED SURFACE SCIENCE
Volume	257
Issue number	23
DOIs	https://doi.org/10.1016/j.apsusc.2011.06.113
Publication status	Published - 15 Sept 2011

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10.1016/j.apsusc.2011.06.113

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title = "The influence of residual gas on boron carbide thin films prepared by magnetron sputtering",

abstract = "Boron carbide (B4C) thin films were prepared by magnetron sputtering and residual gas impurities in the films were analyzed by X-ray photoelectron spectroscopy. The impurities, mainly oxygen, decrease with improving vacuum. By using argon ion beam etching of the films, the atomic concentration was measured as a function of etching depth. The binding energy spectra were analyzed using wavelet transform and curve fitting, showing that most of the oxygen impurity is in the form of boron oxides, and that the impurities are physically trapped among columnar structures in the film. In order to improve the base vacuum before coating the film, a range of methods were used, including argon gas filling on the target surface and titanium pre-sputtering. The experimental results show that the latter is an efficient and feasible method. Based on the titanium pre-sputtering technology, the optical performance of W/B4C multilayer was improved so much. (C) 2011 Elsevier B.V. All rights reserved.",

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T1 - The influence of residual gas on boron carbide thin films prepared by magnetron sputtering

AU - Jiang, Hui

AU - Zhu, Jingtao

AU - Huang, Qiushi

AU - Xu, Jing

AU - Wang, Xiaoqiang

AU - Wang, Zhanshan

AU - Pfauntsch, Slawka

AU - Michette, Alan

PY - 2011/9/15

Y1 - 2011/9/15

N2 - Boron carbide (B4C) thin films were prepared by magnetron sputtering and residual gas impurities in the films were analyzed by X-ray photoelectron spectroscopy. The impurities, mainly oxygen, decrease with improving vacuum. By using argon ion beam etching of the films, the atomic concentration was measured as a function of etching depth. The binding energy spectra were analyzed using wavelet transform and curve fitting, showing that most of the oxygen impurity is in the form of boron oxides, and that the impurities are physically trapped among columnar structures in the film. In order to improve the base vacuum before coating the film, a range of methods were used, including argon gas filling on the target surface and titanium pre-sputtering. The experimental results show that the latter is an efficient and feasible method. Based on the titanium pre-sputtering technology, the optical performance of W/B4C multilayer was improved so much. (C) 2011 Elsevier B.V. All rights reserved.

AB - Boron carbide (B4C) thin films were prepared by magnetron sputtering and residual gas impurities in the films were analyzed by X-ray photoelectron spectroscopy. The impurities, mainly oxygen, decrease with improving vacuum. By using argon ion beam etching of the films, the atomic concentration was measured as a function of etching depth. The binding energy spectra were analyzed using wavelet transform and curve fitting, showing that most of the oxygen impurity is in the form of boron oxides, and that the impurities are physically trapped among columnar structures in the film. In order to improve the base vacuum before coating the film, a range of methods were used, including argon gas filling on the target surface and titanium pre-sputtering. The experimental results show that the latter is an efficient and feasible method. Based on the titanium pre-sputtering technology, the optical performance of W/B4C multilayer was improved so much. (C) 2011 Elsevier B.V. All rights reserved.

U2 - 10.1016/j.apsusc.2011.06.113

DO - 10.1016/j.apsusc.2011.06.113

M3 - Article

VL - 257

SP - 9946

EP - 9952

JO - APPLIED SURFACE SCIENCE

JF - APPLIED SURFACE SCIENCE

IS - 23

ER -

The influence of residual gas on boron carbide thin films prepared by magnetron sputtering

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