The voids growth path on Sn-Ag thin film under high current density

Zhi Jin, Yu An Shen, Yang Zuo, S. H. Mannan, Hiroshi Nishikawa

Research output: Chapter in Book/Report/Conference proceedingConference paperpeer-review

Abstract

In this study, electromigration (EM) behavior in a SnAg solder thin-film stripe deposited on a glass substrate has been investigated under a current density of 4.4 × 104 A/cm2. A new method run in Matlab, “Random walk” was first put forward to on the simulation of void formation. The findings show that the current density and thermal distribution play important roles for the void formations on the cathode if the thermal gradient in the specimen is completely neglected.

Original languageEnglish
Title of host publication2021 International Conference on Electronics Packaging, ICEP 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages115-116
Number of pages2
ISBN (Electronic)9784991191114
DOIs
Publication statusPublished - 12 May 2021
Event20th International Conference on Electronics Packaging, ICEP 2021 - Tokyo, Japan
Duration: 12 May 202114 May 2021

Publication series

Name2021 International Conference on Electronics Packaging, ICEP 2021

Conference

Conference20th International Conference on Electronics Packaging, ICEP 2021
Country/TerritoryJapan
CityTokyo
Period12/05/202114/05/2021

Keywords

  • Electromigration
  • Reliability
  • thin film

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